af2301p p-channel enhan cement mode power mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.3 jul 12, 2005 1/5 ? features - simple drive requirement - small package outline - surface mount device ? product summary bv dss (v) r ds(on) (m ? ) i d (a) -20 130 -2.6 ? pin assignments 3 2 1 (top view) 1. g 2. s 3. d ? general description the advanced power mosfet provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the sot-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. ? pin descriptions pin no. pin name description 1 g gate 2 s source 3 d drain ? ordering information a x 2301p x x x pn package feature f :mosfet w: sot-23 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel ? block diagram s g d
af2301p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.3 j ul 12, 2005 2/5 ? absolute maxi mum ratings symbol parameter rating units v ds drain-source voltage -20 v v gs gate-source voltage 12 v t a =25oc -2.6 i d continuous drain current (note 1) t a =70oc -2.1 a i dm pulsed drain current (note 2, 3) -10 a total power dissipation t a =25oc 1.38 w p d linear derating factor 0.01 w/oc t stg storage temperature range -55 to +150 oc t j operating junction temperature range -55 to +150 oc ? thermal data symbol parameter limit units r ja thermal resistance junction-ambient (note 1) max. 90 oc/w ? electrical characteristics (t j =25 o c unless otherwise specified) limits symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25oc, i d =-1ma - -0.1 - v/oc v gs =-5v, i d =-2.8a - - 130 r ds(on) drain-source on-state resistance (note 3) v gs =-2.8v, i d =-2.0a - - 190 m ? v gs(th) gate threshold voltage v ds = v gs , i d =-250ua -0.5 - - v g fs forward transconductance v ds =-5v, i d =-2.8a - 4.4 - s t j =25oc v ds =-20v, v gs =0v - - -1 i dss drain-source leakage current t j =70oc v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge (note 3) - 5.2 10 q gs gate-source charge - 1.36 - q gd gate-drain (?miller?) charge v ds =-6v, i d =-2.8a, v gs =-5v - 0.6 - nc t d(on) turn-on delay time (note 3) - 5.2 - t r turn-on rise time - 9.7 - t d(off) turn-off delay time - 19 - t f turn-off fall-time v ds =-15v, r d =15 ? , i d =-1a, v gs =-10v, r g =6 ? - 29 - ns c iss input capacitance - 295 - c oss output capacitance - 170 - c rss reverse transfer capacitance v ds =-6v, v gs =0v, f=1.0mhz - 65 - pf ? source-drain diode symbol parameter test conditions min. typ. max. unit i s continuous source current (body diode) v d =v g =0v, v s =-1.2v - - -1 a i sm pulsed source current (body diode) (note 2) - - -10 a v sd forward on voltage (note 3) t j =25 o c, i s =-1.6a, v gs =0v - - 1.2 v note 1: surface mounted on 1 in 2 copper pad of fr4 board; 270 o c/w when mounted on min. copper pad. note 2: pulse width limited by max. junction temperature. note 3: pulse width 300us, duty cycle 2%.
af2301p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.3 j ul 12, 2005 3/5 ? typical performance characteristics fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature
af2301p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.3 j ul 12, 2005 4/5 ? typical performance charac teristics (continued) fig 7. gate charge characteristics fig 8. typical cap acitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform
af2301p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.3 j ul 12, 2005 5/5 ? marking information xx yw sot-23 (top view) date code y : year w : week(a~z) xx: device code (see appendix) appendix part number package device code af2301p sot-23 01 ? package information package type: sot-23 e e1 e d1 d 1. all dimensions are in millimeters. 2. dimension does not include mold protrusions. a1 a a2 dimensions in millimeters symbol min. nom. max. a 1.00 1.15 1.30 a1 0.00 - 0.10 a2 0.10 0.15 0.20 d 2.70 2.90 3.10 d1 0.30 0.40 0.50 e 1.70 2.00 2.30 e 2.40 2.65 2.90 e1 1.40 1.50 1.60
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